All Transistors. PBSS4032NZ Datasheet

 

PBSS4032NZ Datasheet and Replacement


   Type Designator: PBSS4032NZ
   SMD Transistor Code: PB4032NZ
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4.9 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 145 MHz
   Collector Capacitance (Cc): 65 pF
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: SOT-223
 

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PBSS4032NZ Datasheet (PDF)

 ..1. Size:196K  philips
pbss4032nz.pdf pdf_icon

PBSS4032NZ

PBSS4032NZ30 V, 4.9 A NPN low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4032PZ.1.2 Features and benefits Low collector-emitter saturation voltage VCEsat

 ..2. Size:196K  nxp
pbss4032nz.pdf pdf_icon

PBSS4032NZ

PBSS4032NZ30 V, 4.9 A NPN low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4032PZ.1.2 Features and benefits Low collector-emitter saturation voltage VCEsat

 5.1. Size:150K  philips
pbss4032nd.pdf pdf_icon

PBSS4032NZ

PBSS4032ND30 V, 3.5 A NPN low VCEsat (BISS) transistorRev. 01 30 January 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4032PD.1.2 Features Low collector-emitter saturation voltage VCEsat Optimized switc

 5.2. Size:182K  philips
pbss4032nt.pdf pdf_icon

PBSS4032NZ

PBSS4032NT30 V, 2.6 A NPN low VCEsat (BISS) transistorRev. 01 18 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4032PT.1.2 Features Low collector-emitter saturation voltage VCEsat Optimized sw

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: CSA952L9AW | NA41WJ | NB014EU | NB022HZ | 2SA525 | 2SA621 | 2SB1401

Keywords - PBSS4032NZ transistor datasheet

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