PBSS4032PX Todos los transistores

 

PBSS4032PX . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS4032PX
   Código: *6J
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2.5 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 115 MHz
   Capacitancia de salida (Cc): 85 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: SOT-89
 
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PBSS4032PX Datasheet (PDF)

 ..1. Size:188K  philips
pbss4032px.pdf pdf_icon

PBSS4032PX

PBSS4032PX30 V, 4.2 A PNP low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4032NX.1.2 Features and benefits Very low collector-emitter saturati

 ..2. Size:188K  nxp
pbss4032px.pdf pdf_icon

PBSS4032PX

PBSS4032PX30 V, 4.2 A PNP low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4032NX.1.2 Features and benefits Very low collector-emitter saturati

 5.1. Size:182K  philips
pbss4032pd.pdf pdf_icon

PBSS4032PX

PBSS4032PD30 V, 2.7 A PNP low VCEsat (BISS) transistorRev. 01 27 January 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4032ND.1.2 Features Low collector-emitter saturation voltage VCEsat Optimized switc

 5.2. Size:172K  philips
pbss4032pt.pdf pdf_icon

PBSS4032PX

PBSS4032PT30 V, 2.4 A PNP low VCEsat (BISS) transistorRev. 01 18 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4032NT.1.2 Features Low collector-emitter saturation voltage VCEsat Optimized sw

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