PBSS4032PX Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS4032PX

Código: *6J

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2.5 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 115 MHz

Capacitancia de salida (Cc): 85 pF

Ganancia de corriente contínua (hFE): 60

Encapsulados: SOT-89

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PBSS4032PX datasheet

 ..1. Size:188K  philips
pbss4032px.pdf pdf_icon

PBSS4032PX

PBSS4032PX 30 V, 4.2 A PNP low VCEsat (BISS) transistor Rev. 01 1 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4032NX. 1.2 Features and benefits Very low collector-emitter saturati

 ..2. Size:188K  nxp
pbss4032px.pdf pdf_icon

PBSS4032PX

PBSS4032PX 30 V, 4.2 A PNP low VCEsat (BISS) transistor Rev. 01 1 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4032NX. 1.2 Features and benefits Very low collector-emitter saturati

 5.1. Size:182K  philips
pbss4032pd.pdf pdf_icon

PBSS4032PX

PBSS4032PD 30 V, 2.7 A PNP low VCEsat (BISS) transistor Rev. 01 27 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4032ND. 1.2 Features Low collector-emitter saturation voltage VCEsat Optimized switc

 5.2. Size:172K  philips
pbss4032pt.pdf pdf_icon

PBSS4032PX

PBSS4032PT 30 V, 2.4 A PNP low VCEsat (BISS) transistor Rev. 01 18 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4032NT. 1.2 Features Low collector-emitter saturation voltage VCEsat Optimized sw

Otros transistores... PBSS4021NZ, PBSS4021PX, PBSS4021PZ, PBSS4021SN, PBSS4021SP, PBSS4021SPN, PBSS4032NX, PBSS4032NZ, BC327, PBSS4032PZ, PBSS4032SN, PBSS4032SP, PBSS4032SPN, PBSS4041NX, PBSS4041NZ, PBSS4041PX, PBSS4041PZ