All Transistors. PBSS4032PX Datasheet

 

PBSS4032PX Datasheet and Replacement


   Type Designator: PBSS4032PX
   SMD Transistor Code: *6J
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2.5 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4.2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 115 MHz
   Collector Capacitance (Cc): 85 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT-89
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PBSS4032PX Datasheet (PDF)

 ..1. Size:188K  philips
pbss4032px.pdf pdf_icon

PBSS4032PX

PBSS4032PX30 V, 4.2 A PNP low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4032NX.1.2 Features and benefits Very low collector-emitter saturati

 ..2. Size:188K  nxp
pbss4032px.pdf pdf_icon

PBSS4032PX

PBSS4032PX30 V, 4.2 A PNP low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4032NX.1.2 Features and benefits Very low collector-emitter saturati

 5.1. Size:182K  philips
pbss4032pd.pdf pdf_icon

PBSS4032PX

PBSS4032PD30 V, 2.7 A PNP low VCEsat (BISS) transistorRev. 01 27 January 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4032ND.1.2 Features Low collector-emitter saturation voltage VCEsat Optimized switc

 5.2. Size:172K  philips
pbss4032pt.pdf pdf_icon

PBSS4032PX

PBSS4032PT30 V, 2.4 A PNP low VCEsat (BISS) transistorRev. 01 18 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4032NT.1.2 Features Low collector-emitter saturation voltage VCEsat Optimized sw

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: BFG19S | HSE834 | 3CK9 | RN2902 | PT1837 | RN4986AFS | RN2971FE

Keywords - PBSS4032PX transistor datasheet

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