PBSS4041PX
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS4041PX
Código: *6G
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2.5
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 110
MHz
Capacitancia de salida (Cc): 85
pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta:
SOT-89
Búsqueda de reemplazo de transistor bipolar PBSS4041PX
PBSS4041PX
Datasheet (PDF)
..1. Size:192K philips
pbss4041px.pdf
PBSS4041PX60 V, 5 A PNP low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4041NX.1.2 Features and benefits Very low collector-emitter saturation
..2. Size:193K nxp
pbss4041px.pdf
PBSS4041PX60 V, 5 A PNP low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4041NX.1.2 Features and benefits Very low collector-emitter saturation
5.1. Size:181K philips
pbss4041pz.pdf
PBSS4041PZ60 V, 5.7 A PNP low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4041NZ.1.2 Features and benefits Very low collector-emitter saturation voltage V
5.2. Size:182K philips
pbss4041pt.pdf
PBSS4041PT60 V, 2.7 A PNP low VCEsat (BISS) transistorRev. 02 9 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4041NT.1.2 Features and benefits Very low collector-emitter saturation voltage VCEsat
5.3. Size:181K nxp
pbss4041pz.pdf
PBSS4041PZ60 V, 5.7 A PNP low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4041NZ.1.2 Features and benefits Very low collector-emitter saturation voltage V
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