Справочник транзисторов. PBSS4041PX

 

Биполярный транзистор PBSS4041PX - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: PBSS4041PX
   Маркировка: *6G
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 2.5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 110 MHz
   Ёмкость коллекторного перехода (Cc): 85 pf
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SOT-89

 Аналоги (замена) для PBSS4041PX

 

 

PBSS4041PX Datasheet (PDF)

 ..1. Size:192K  philips
 pbss4041px.pdf

PBSS4041PX PBSS4041PX

PBSS4041PX60 V, 5 A PNP low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4041NX.1.2 Features and benefits Very low collector-emitter saturation

 ..2. Size:193K  nxp
 pbss4041px.pdf

PBSS4041PX PBSS4041PX

PBSS4041PX60 V, 5 A PNP low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4041NX.1.2 Features and benefits Very low collector-emitter saturation

 5.1. Size:181K  philips
 pbss4041pz.pdf

PBSS4041PX PBSS4041PX

PBSS4041PZ60 V, 5.7 A PNP low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4041NZ.1.2 Features and benefits Very low collector-emitter saturation voltage V

 5.2. Size:182K  philips
 pbss4041pt.pdf

PBSS4041PX PBSS4041PX

PBSS4041PT60 V, 2.7 A PNP low VCEsat (BISS) transistorRev. 02 9 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4041NT.1.2 Features and benefits Very low collector-emitter saturation voltage VCEsat

 5.3. Size:181K  nxp
 pbss4041pz.pdf

PBSS4041PX PBSS4041PX

PBSS4041PZ60 V, 5.7 A PNP low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4041NZ.1.2 Features and benefits Very low collector-emitter saturation voltage V

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