All Transistors. PBSS4041PX Datasheet

 

PBSS4041PX Datasheet and Replacement


   Type Designator: PBSS4041PX
   SMD Transistor Code: *6G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2.5 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 110 MHz
   Collector Capacitance (Cc): 85 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT-89
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PBSS4041PX Datasheet (PDF)

 ..1. Size:192K  philips
pbss4041px.pdf pdf_icon

PBSS4041PX

PBSS4041PX60 V, 5 A PNP low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4041NX.1.2 Features and benefits Very low collector-emitter saturation

 ..2. Size:193K  nxp
pbss4041px.pdf pdf_icon

PBSS4041PX

PBSS4041PX60 V, 5 A PNP low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4041NX.1.2 Features and benefits Very low collector-emitter saturation

 5.1. Size:181K  philips
pbss4041pz.pdf pdf_icon

PBSS4041PX

PBSS4041PZ60 V, 5.7 A PNP low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4041NZ.1.2 Features and benefits Very low collector-emitter saturation voltage V

 5.2. Size:182K  philips
pbss4041pt.pdf pdf_icon

PBSS4041PX

PBSS4041PT60 V, 2.7 A PNP low VCEsat (BISS) transistorRev. 02 9 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4041NT.1.2 Features and benefits Very low collector-emitter saturation voltage VCEsat

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: NPS5910 | EMX1FHA | KT719A | 2SC155 | CH837UPNGP | MRF1090MB | BD585

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