PBSS4041PZ Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS4041PZ

Código: PB4041PZ

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2.6 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5.7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 110 MHz

Capacitancia de salida (Cc): 85 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT-223

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PBSS4041PZ datasheet

 ..1. Size:181K  philips
 pbss4041pz.pdf pdf_icon

PBSS4041PZ

PBSS4041PZ 60 V, 5.7 A PNP low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4041NZ. 1.2 Features and benefits Very low collector-emitter saturation voltage V

 ..2. Size:181K  nxp
 pbss4041pz.pdf pdf_icon

PBSS4041PZ

PBSS4041PZ 60 V, 5.7 A PNP low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4041NZ. 1.2 Features and benefits Very low collector-emitter saturation voltage V

 5.1. Size:192K  philips
 pbss4041px.pdf pdf_icon

PBSS4041PZ

PBSS4041PX 60 V, 5 A PNP low VCEsat (BISS) transistor Rev. 01 1 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4041NX. 1.2 Features and benefits Very low collector-emitter saturation

 5.2. Size:182K  philips
 pbss4041pt.pdf pdf_icon

PBSS4041PZ

PBSS4041PT 60 V, 2.7 A PNP low VCEsat (BISS) transistor Rev. 02 9 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4041NT. 1.2 Features and benefits Very low collector-emitter saturation voltage VCEsat

MOSTRAR MÁS

Otros transistores... PBSS4032PX, PBSS4032PZ, PBSS4032SN, PBSS4032SP, PBSS4032SPN, PBSS4041NX, PBSS4041NZ, PBSS4041PX, B772, PBSS4041SN, PBSS4041SP, PBSS4041SPN, PBSS4112PAN, PBSS4112PANP, PBSS4130PAN, PBSS4130PANP, PBSS4130QA