PBSS4041PZ Specs and Replacement

Type Designator: PBSS4041PZ

SMD Transistor Code: PB4041PZ

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2.6 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 5.7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 110 MHz

Collector Capacitance (Cc): 85 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT-223

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PBSS4041PZ datasheet

 ..1. Size:181K  philips

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PBSS4041PZ

PBSS4041PZ 60 V, 5.7 A PNP low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4041NZ. 1.2 Features and benefits Very low collector-emitter saturation voltage V... See More ⇒

 ..2. Size:181K  nxp

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PBSS4041PZ

PBSS4041PZ 60 V, 5.7 A PNP low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4041NZ. 1.2 Features and benefits Very low collector-emitter saturation voltage V... See More ⇒

 5.1. Size:192K  philips

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PBSS4041PZ

PBSS4041PX 60 V, 5 A PNP low VCEsat (BISS) transistor Rev. 01 1 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4041NX. 1.2 Features and benefits Very low collector-emitter saturation... See More ⇒

 5.2. Size:182K  philips

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PBSS4041PZ

PBSS4041PT 60 V, 2.7 A PNP low VCEsat (BISS) transistor Rev. 02 9 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4041NT. 1.2 Features and benefits Very low collector-emitter saturation voltage VCEsat ... See More ⇒

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Detailed specifications: PBSS4032PX, PBSS4032PZ, PBSS4032SN, PBSS4032SP, PBSS4032SPN, PBSS4041NX, PBSS4041NZ, PBSS4041PX, B772, PBSS4041SN, PBSS4041SP, PBSS4041SPN, PBSS4112PAN, PBSS4112PANP, PBSS4130PAN, PBSS4130PANP, PBSS4130QA

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