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PBSS4130PAN . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS4130PAN
   Código: 2D
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.45 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 90 MHz
   Capacitancia de salida (Cc): 7.5 pF
   Ganancia de corriente contínua (hfe): 180
   Paquete / Cubierta: SOT-1118
 

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PBSS4130PAN Datasheet (PDF)

 ..1. Size:268K  nxp
pbss4130pan.pdf pdf_icon

PBSS4130PAN

PBSS4130PAN30 V, 1 A NPN/NPN low VCEsat (BISS) transistor11 January 2013 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4130PANP. PNP/PNP complement: PBSS5130PAP.2. Features and benefits Very low collecto

 0.1. Size:337K  nxp
pbss4130panp.pdf pdf_icon

PBSS4130PAN

PBSS4130PANP30 V, 1 A NPN/PNP low VCEsat (BISS) transistor12 December 2012 Product data sheet1. General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: PBSS4130PAN. PNP/PNP complement: PBSS5130PAP.2. Features and benefits Very low collect

 6.1. Size:49K  philips
pbss4130t.pdf pdf_icon

PBSS4130PAN

DISCRETE SEMICONDUCTORSDATA SHEETM3D088PBSS4130T30 V, 1 ANPN low VCEsat (BISS) transistorProduct specification 2003 Nov 27Philips Semiconductors Product specification30 V, 1 APBSS4130TNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capability IC and I

 6.2. Size:257K  nxp
pbss4130qa.pdf pdf_icon

PBSS4130PAN

PBSS4130QA30 V, 1 A NPN low VCEsat (BISS) transistor28 August 2013 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.PNP complement: PBSS5130QA.2. Features and benefits Very low collector-emitter

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History: S518T | BD321A | MP4355 | UNR521E

 

 
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