Биполярный транзистор PBSS4130PAN - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PBSS4130PAN
Маркировка: 2D
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.45 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 90 MHz
Ёмкость коллекторного перехода (Cc): 7.5 pf
Статический коэффициент передачи тока (hfe): 180
Корпус транзистора: SOT-1118
Аналоги (замена) для PBSS4130PAN
PBSS4130PAN Datasheet (PDF)
pbss4130pan.pdf
PBSS4130PAN30 V, 1 A NPN/NPN low VCEsat (BISS) transistor11 January 2013 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4130PANP. PNP/PNP complement: PBSS5130PAP.2. Features and benefits Very low collecto
pbss4130panp.pdf
PBSS4130PANP30 V, 1 A NPN/PNP low VCEsat (BISS) transistor12 December 2012 Product data sheet1. General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: PBSS4130PAN. PNP/PNP complement: PBSS5130PAP.2. Features and benefits Very low collect
pbss4130t.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D088PBSS4130T30 V, 1 ANPN low VCEsat (BISS) transistorProduct specification 2003 Nov 27Philips Semiconductors Product specification30 V, 1 APBSS4130TNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capability IC and I
pbss4130qa.pdf
PBSS4130QA30 V, 1 A NPN low VCEsat (BISS) transistor28 August 2013 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.PNP complement: PBSS5130QA.2. Features and benefits Very low collector-emitter
pbss4130t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SA1319S
History: 2SA1319S
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050