PBSS4130PAN Specs and Replacement

Type Designator: PBSS4130PAN

SMD Transistor Code: 2D

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.45 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 90 MHz

Collector Capacitance (Cc): 7.5 pF

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: SOT-1118

 PBSS4130PAN Substitution

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PBSS4130PAN datasheet

 ..1. Size:268K  nxp

pbss4130pan.pdf pdf_icon

PBSS4130PAN

PBSS4130PAN 30 V, 1 A NPN/NPN low VCEsat (BISS) transistor 11 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4130PANP. PNP/PNP complement PBSS5130PAP. 2. Features and benefits Very low collecto... See More ⇒

 0.1. Size:337K  nxp

pbss4130panp.pdf pdf_icon

PBSS4130PAN

PBSS4130PANP 30 V, 1 A NPN/PNP low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement PBSS4130PAN. PNP/PNP complement PBSS5130PAP. 2. Features and benefits Very low collect... See More ⇒

 6.1. Size:49K  philips

pbss4130t.pdf pdf_icon

PBSS4130PAN

DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4130T 30 V, 1 A NPN low VCEsat (BISS) transistor Product specification 2003 Nov 27 Philips Semiconductors Product specification 30 V, 1 A PBSS4130T NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capability IC and I... See More ⇒

 6.2. Size:257K  nxp

pbss4130qa.pdf pdf_icon

PBSS4130PAN

PBSS4130QA 30 V, 1 A NPN low VCEsat (BISS) transistor 28 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement PBSS5130QA. 2. Features and benefits Very low collector-emitter ... See More ⇒

Detailed specifications: PBSS4041NZ, PBSS4041PX, PBSS4041PZ, PBSS4041SN, PBSS4041SP, PBSS4041SPN, PBSS4112PAN, PBSS4112PANP, BC558, PBSS4130PANP, PBSS4130QA, PBSS4160PAN, PBSS4160PANP, PBSS4160PANPS, PBSS4160PANS, PBSS4160QA, PBSS4230PAN

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