PBSS4230PAN . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS4230PAN
Código: 2G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.45 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 60 MHz
Capacitancia de salida (Cc): 13.5 pF
Ganancia de corriente contínua (hfe): 150
Paquete / Cubierta: SOT-1118
PBSS4230PAN Datasheet (PDF)
pbss4230pan.pdf

PBSS4230PAN30 V, 2 A NPN/NPN low VCEsat (BISS) transistor14 December 2012 Product data sheet1. General descriptionNPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4230PANP. PNP/PNP complement: PBSS5230PAP.2. Features and benefits Very low collect
pbss4230panp.pdf

PBSS4230PANP30 V, 2 A NPN/PNP low VCEsat (BISS) transistor14 December 2012 Product data sheet1. General descriptionNPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/NPN complement: PBSS4230PAN. PNP/PNP complement: PBSS5230PAP.2. Features and benefits Very low collect
pbss4230t.pdf

DISCRETE SEMICONDUCTORS DATA SHEETM3D088PBSS4230T30 V, 2 A NPN low VCEsat (BISS) transistorProduct data sheet 2003 Sep 29NXP Semiconductors Product data sheet30 V, 2 A PBSS4230TNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICMVC
pbss4230qa.pdf

PBSS4230QA30 V, 2 A NPN low VCEsat (BISS) transistor23 August 2013 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.PNP complement: PBSS5230QA.2. Features and benefits Very low collector-emitter
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: BD148-6 | BD346 | DTC143ZUA | TN708
History: BD148-6 | BD346 | DTC143ZUA | TN708



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