PBSS4230PAN Specs and Replacement

Type Designator: PBSS4230PAN

SMD Transistor Code: 2G

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.45 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 13.5 pF

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: SOT-1118

 PBSS4230PAN Substitution

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PBSS4230PAN datasheet

 ..1. Size:247K  nxp

pbss4230pan.pdf pdf_icon

PBSS4230PAN

PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor 14 December 2012 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4230PANP. PNP/PNP complement PBSS5230PAP. 2. Features and benefits Very low collect... See More ⇒

 0.1. Size:338K  nxp

pbss4230panp.pdf pdf_icon

PBSS4230PAN

PBSS4230PANP 30 V, 2 A NPN/PNP low VCEsat (BISS) transistor 14 December 2012 Product data sheet 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement PBSS4230PAN. PNP/PNP complement PBSS5230PAP. 2. Features and benefits Very low collect... See More ⇒

 6.1. Size:251K  philips

pbss4230t.pdf pdf_icon

PBSS4230PAN

DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4230T 30 V, 2 A NPN low VCEsat (BISS) transistor Product data sheet 2003 Sep 29 NXP Semiconductors Product data sheet 30 V, 2 A PBSS4230T NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICM VC... See More ⇒

 6.2. Size:244K  nxp

pbss4230qa.pdf pdf_icon

PBSS4230PAN

PBSS4230QA 30 V, 2 A NPN low VCEsat (BISS) transistor 23 August 2013 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement PBSS5230QA. 2. Features and benefits Very low collector-emitter ... See More ⇒

Detailed specifications: PBSS4130PAN, PBSS4130PANP, PBSS4130QA, PBSS4160PAN, PBSS4160PANP, PBSS4160PANPS, PBSS4160PANS, PBSS4160QA, 9014, PBSS4230PANP, PBSS4230QA, PBSS4240X, PBSS4240Z, PBSS4260PAN, PBSS4260PANP, PBSS4260QA, PBSS4330PAS

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