PBSS4240Z Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS4240Z

Código: S4240Z

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1.35 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 MHz

Capacitancia de salida (Cc): 10 pF

Ganancia de corriente contínua (hFE): 75

Encapsulados: SOT-223

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PBSS4240Z datasheet

 ..1. Size:208K  nxp
pbss4240z.pdf pdf_icon

PBSS4240Z

PBSS4240Z 40 V, 2 A NPN low VCEsat (BISS) transistor 16 October 2014 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS5240Z 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capabi

 6.1. Size:435K  philips
pbss4240dpn.pdf pdf_icon

PBSS4240Z

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Product data sheet 2003 Feb 20 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat MAX. High collector current capability IC and ICM SYMBOL PARAMETER UNIT

 6.2. Size:246K  philips
pbss4240t.pdf pdf_icon

PBSS4240Z

DISCRETE SEMICONDUCTORS DATA SHEET PBSS4240T 40 V; 2 A NPN low VCEsat (BISS) transistor Product data sheet 2004 Jan 09 Supersedes data of 2001 Jul 13 NXP Semiconductors Product data sheet 40 V; 2 A NPN low VCEsat PBSS4240T (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO

 6.3. Size:55K  nxp
pbss4240y.pdf pdf_icon

PBSS4240Z

DISCRETE SEMICONDUCTORS DATA SHEET age MBD128 PBSS4240Y 40 V low VCEsat NPN transistor Product specification 2001 Jul 13 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4240Y FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO collector-emitter voltage 40 V Impr

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