PBSS4240Z Specs and Replacement

Type Designator: PBSS4240Z

SMD Transistor Code: S4240Z

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.35 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 75

Noise Figure, dB: -

Package: SOT-223

 PBSS4240Z Substitution

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PBSS4240Z datasheet

 ..1. Size:208K  nxp

pbss4240z.pdf pdf_icon

PBSS4240Z

PBSS4240Z 40 V, 2 A NPN low VCEsat (BISS) transistor 16 October 2014 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS5240Z 2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capabi... See More ⇒

 6.1. Size:435K  philips

pbss4240dpn.pdf pdf_icon

PBSS4240Z

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Product data sheet 2003 Feb 20 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat MAX. High collector current capability IC and ICM SYMBOL PARAMETER UNIT... See More ⇒

 6.2. Size:246K  philips

pbss4240t.pdf pdf_icon

PBSS4240Z

DISCRETE SEMICONDUCTORS DATA SHEET PBSS4240T 40 V; 2 A NPN low VCEsat (BISS) transistor Product data sheet 2004 Jan 09 Supersedes data of 2001 Jul 13 NXP Semiconductors Product data sheet 40 V; 2 A NPN low VCEsat PBSS4240T (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO ... See More ⇒

 6.3. Size:55K  nxp

pbss4240y.pdf pdf_icon

PBSS4240Z

DISCRETE SEMICONDUCTORS DATA SHEET age MBD128 PBSS4240Y 40 V low VCEsat NPN transistor Product specification 2001 Jul 13 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4240Y FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO collector-emitter voltage 40 V Impr... See More ⇒

Detailed specifications: PBSS4160PANP, PBSS4160PANPS, PBSS4160PANS, PBSS4160QA, PBSS4230PAN, PBSS4230PANP, PBSS4230QA, PBSS4240X, A1013, PBSS4260PAN, PBSS4260PANP, PBSS4260QA, PBSS4330PAS, PBSS4360Z, PBSS5112PAP, PBSS5130PAP, PBSS5130QA

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