All Transistors. PBSS4240Z Datasheet

 

PBSS4240Z Datasheet and Replacement


   Type Designator: PBSS4240Z
   SMD Transistor Code: S4240Z
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1.35 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 75
   Noise Figure, dB: -
   Package: SOT-223
 

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PBSS4240Z Datasheet (PDF)

 ..1. Size:208K  nxp
pbss4240z.pdf pdf_icon

PBSS4240Z

PBSS4240Z40 V, 2 A NPN low VCEsat (BISS) transistor16 October 2014 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium powerSOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS5240Z2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capabi

 6.1. Size:435K  philips
pbss4240dpn.pdf pdf_icon

PBSS4240Z

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D302PBSS4240DPN40 V low VCEsat NPN/PNP transistorProduct data sheet 2003 Feb 20NXP Semiconductors Product data sheet40 V low VCEsat NPN/PNP transistorPBSS4240DPNFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatMAX. High collector current capability IC and ICMSYMBOL PARAMETER UNIT

 6.2. Size:246K  philips
pbss4240t.pdf pdf_icon

PBSS4240Z

DISCRETE SEMICONDUCTORS DATA SHEETPBSS4240T40 V; 2 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 Jan 09Supersedes data of 2001 Jul 13 NXP Semiconductors Product data sheet40 V; 2 A NPN low VCEsat PBSS4240T(BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO

 6.3. Size:55K  nxp
pbss4240y.pdf pdf_icon

PBSS4240Z

DISCRETE SEMICONDUCTORSDATA SHEETageMBD128PBSS4240Y40 V low VCEsat NPN transistorProduct specification 2001 Jul 13Philips Semiconductors Product specification40 V low VCEsat NPN transistorPBSS4240YFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO collector-emitter voltage 40 V Impr

Datasheet: PBSS4160PANP , PBSS4160PANPS , PBSS4160PANS , PBSS4160QA , PBSS4230PAN , PBSS4230PANP , PBSS4230QA , PBSS4240X , 2SD313 , PBSS4260PAN , PBSS4260PANP , PBSS4260QA , PBSS4330PAS , PBSS4360Z , PBSS5112PAP , PBSS5130PAP , PBSS5130QA .

History: DDC114YU | 2SC1741 | PBSS4032PZ | KT602AM | BC847C-G | 2N391 | BUW22

Keywords - PBSS4240Z transistor datasheet

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