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PBSS4330PAS . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS4330PAS
   Código: E1
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2.5 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 21 pF
   Ganancia de corriente contínua (hfe): 180
   Paquete / Cubierta: SOT-1061D
 

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PBSS4330PAS Datasheet (PDF)

 ..1. Size:246K  nxp
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PBSS4330PAS

PBSS4330PAS30 V, 3 A NPN low VCEsat (BISS) transistor11 September 2014 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultrathin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plasticpackage with medium power capability and visible and soldarable side pads.PNP complement: PBSS5330PAS2. F

 4.1. Size:156K  philips
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PBSS4330PAS

PBSS4330PA30 V, 3 A NPN low VCEsat (BISS) transistorRev. 01 19 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.PNP complement: PBSS5330PA.1.2 Features and benefits

 4.2. Size:702K  nxp
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PBSS4330PAS

PBSS4330PA30 V, 3 A NPN low VCEsat (BISS) transistor7 April 2015 Product data sheet1. General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in anultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package withmedium power capability.PNP complement: PBSS5330PA.2. Features and benefits Low collector-emitter saturatio

 6.1. Size:101K  nxp
 pbss4330x.pdf pdf_icon

PBSS4330PAS

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109PBSS4330X30 V, 3 ANPN low VCEsat (BISS) transistorProduct specification 2004 Dec 06Supersedes data of 2003 Nov 28Philips Semiconductors Product specification30 V, 3 APBSS4330XNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitte

MOSTRAR MÁS

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: GT100-6 | NB113EH | TN3415 | BR3DD13007HV7R

 

 
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