PBSS4330PAS Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS4330PAS

Código: E1

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2.5 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 21 pF

Ganancia de corriente contínua (hFE): 180

Encapsulados: SOT-1061D

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PBSS4330PAS datasheet

 ..1. Size:246K  nxp
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PBSS4330PAS

PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor 11 September 2014 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP complement PBSS5330PAS 2. F

 4.1. Size:156K  philips
 pbss4330pa.pdf pdf_icon

PBSS4330PAS

PBSS4330PA 30 V, 3 A NPN low VCEsat (BISS) transistor Rev. 01 19 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement PBSS5330PA. 1.2 Features and benefits

 4.2. Size:702K  nxp
 pbss4330pa.pdf pdf_icon

PBSS4330PAS

PBSS4330PA 30 V, 3 A NPN low VCEsat (BISS) transistor 7 April 2015 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement PBSS5330PA. 2. Features and benefits Low collector-emitter saturatio

 6.1. Size:101K  nxp
 pbss4330x.pdf pdf_icon

PBSS4330PAS

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4330X 30 V, 3 A NPN low VCEsat (BISS) transistor Product specification 2004 Dec 06 Supersedes data of 2003 Nov 28 Philips Semiconductors Product specification 30 V, 3 A PBSS4330X NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitte

MOSTRAR MÁS

Otros transistores... PBSS4230PAN, PBSS4230PANP, PBSS4230QA, PBSS4240X, PBSS4240Z, PBSS4260PAN, PBSS4260PANP, PBSS4260QA, D880, PBSS4360Z, PBSS5112PAP, PBSS5130PAP, PBSS5130QA, PBSS5160PAP, PBSS5160PAPS, PBSS5160QA, PBSS5160T-HF