PBSS4330PAS Specs and Replacement

Type Designator: PBSS4330PAS

SMD Transistor Code: E1

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2.5 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 21 pF

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: SOT-1061D

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PBSS4330PAS datasheet

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PBSS4330PAS

PBSS4330PAS 30 V, 3 A NPN low VCEsat (BISS) transistor 11 September 2014 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. PNP complement PBSS5330PAS 2. F... See More ⇒

 4.1. Size:156K  philips

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PBSS4330PAS

PBSS4330PA 30 V, 3 A NPN low VCEsat (BISS) transistor Rev. 01 19 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement PBSS5330PA. 1.2 Features and benefits... See More ⇒

 4.2. Size:702K  nxp

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PBSS4330PAS

PBSS4330PA 30 V, 3 A NPN low VCEsat (BISS) transistor 7 April 2015 Product data sheet 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement PBSS5330PA. 2. Features and benefits Low collector-emitter saturatio... See More ⇒

 6.1. Size:101K  nxp

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PBSS4330PAS

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS4330X 30 V, 3 A NPN low VCEsat (BISS) transistor Product specification 2004 Dec 06 Supersedes data of 2003 Nov 28 Philips Semiconductors Product specification 30 V, 3 A PBSS4330X NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitte... See More ⇒

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Detailed specifications: PBSS4230PAN, PBSS4230PANP, PBSS4230QA, PBSS4240X, PBSS4240Z, PBSS4260PAN, PBSS4260PANP, PBSS4260QA, D880, PBSS4360Z, PBSS5112PAP, PBSS5130PAP, PBSS5130QA, PBSS5160PAP, PBSS5160PAPS, PBSS5160QA, PBSS5160T-HF

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