PBSS5130PAP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PBSS5130PAP30 V, 1 A PNP/PNP low VCEsat (BISS) transistor12 December 2012 Product data sheet1. General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4130PANP. NPN/NPN complement: PBSS4130PAN.2. Features and benefits Very low collect

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PBSS5130T30 V, 1 A PNP low VCEsat (BISS) transistorProduct data sheet 2003 Dec 12NXP Semiconductors Product data sheet30 V, 1 A PBSS5130TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capabili

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS5130QA30 V, 1 A PNP low VCEsat (BISS) transistor28 August 2013 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.NPN complement: PBSS4130QA.2. Features and benefits Very low collector-emitter