PBSS5130PAP
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS5130PAP
Código: 2E
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.45
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 30
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 65
MHz
Capacitancia de salida (Cc): 13
pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SOT-1118
Búsqueda de reemplazo de transistor bipolar PBSS5130PAP
PBSS5130PAP
Datasheet (PDF)
..1. Size:245K nxp
pbss5130pap.pdf
PBSS5130PAP30 V, 1 A PNP/PNP low VCEsat (BISS) transistor12 December 2012 Product data sheet1. General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4130PANP. NPN/NPN complement: PBSS4130PAN.2. Features and benefits Very low collect
6.1. Size:119K philips
pbss5130t.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PBSS5130T30 V, 1 A PNP low VCEsat (BISS) transistorProduct data sheet 2003 Dec 12NXP Semiconductors Product data sheet30 V, 1 A PBSS5130TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capabili
6.2. Size:314K nxp
pbss5130t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
6.3. Size:236K nxp
pbss5130qa.pdf
PBSS5130QA30 V, 1 A PNP low VCEsat (BISS) transistor28 August 2013 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.NPN complement: PBSS4130QA.2. Features and benefits Very low collector-emitter
Otros transistores... 2N3192
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