PBSS5130PAP Specs and Replacement

Type Designator: PBSS5130PAP

SMD Transistor Code: 2E

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.45 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 65 MHz

Collector Capacitance (Cc): 13 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT-1118

 PBSS5130PAP Substitution

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PBSS5130PAP datasheet

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PBSS5130PAP

PBSS5130PAP 30 V, 1 A PNP/PNP low VCEsat (BISS) transistor 12 December 2012 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement PBSS4130PANP. NPN/NPN complement PBSS4130PAN. 2. Features and benefits Very low collect... See More ⇒

 6.1. Size:119K  philips

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PBSS5130PAP

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS5130T 30 V, 1 A PNP low VCEsat (BISS) transistor Product data sheet 2003 Dec 12 NXP Semiconductors Product data sheet 30 V, 1 A PBSS5130T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capabili... See More ⇒

 6.2. Size:314K  nxp

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PBSS5130PAP

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

 6.3. Size:236K  nxp

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PBSS5130PAP

PBSS5130QA 30 V, 1 A PNP low VCEsat (BISS) transistor 28 August 2013 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN complement PBSS4130QA. 2. Features and benefits Very low collector-emitter ... See More ⇒

Detailed specifications: PBSS4240X, PBSS4240Z, PBSS4260PAN, PBSS4260PANP, PBSS4260QA, PBSS4330PAS, PBSS4360Z, PBSS5112PAP, 2N4401, PBSS5130QA, PBSS5160PAP, PBSS5160PAPS, PBSS5160QA, PBSS5160T-HF, PBSS5230PAP, PBSS5230QA, PBSS5240X

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