PBSS5330PAS Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS5330PAS

Código: E2

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2.5 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 38 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT-1061D

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PBSS5330PAS datasheet

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PBSS5330PAS

PBSS5330PAS 30 V, 3 A PNP low VCEsat (BISS) transistor 11 September 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. NPN complement PBSS4330PAS 2. F

 4.1. Size:158K  philips
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PBSS5330PAS

PBSS5330PA 30 V, 3 A PNP low VCEsat (BISS) transistor Rev. 01 19 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4330PA. 1.2 Features and benefits

 4.2. Size:704K  nxp
 pbss5330pa.pdf pdf_icon

PBSS5330PAS

PBSS5330PA 30 V, 3 A PNP low VCEsat (BISS) transistor 7 April 2015 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4330PA. 2. Features and benefits Low collector-emitter saturatio

 6.1. Size:189K  philips
 pbss5330x.pdf pdf_icon

PBSS5330PAS

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5330X 30 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Nov 03 Supersedes data of 2003 Nov 28 NXP Semiconductors Product data sheet 30 V, 3 A PBSS5330X PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitter sat

MOSTRAR MÁS

Otros transistores... PBSS5160QA, PBSS5160T-HF, PBSS5230PAP, PBSS5230QA, PBSS5240X, PBSS5240Z, PBSS5260PAP, PBSS5260QA, 2SD669, PBSS5360Z, KSA614F, KSB13002AR, KSB13003A, KSB13003AR, KSB13003C, KSB13003CR, KSB13003ER