PBSS5330PAS Specs and Replacement

Type Designator: PBSS5330PAS

SMD Transistor Code: E2

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2.5 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 38 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT-1061D

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PBSS5330PAS datasheet

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PBSS5330PAS

PBSS5330PAS 30 V, 3 A PNP low VCEsat (BISS) transistor 11 September 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads. NPN complement PBSS4330PAS 2. F... See More ⇒

 4.1. Size:158K  philips

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PBSS5330PAS

PBSS5330PA 30 V, 3 A PNP low VCEsat (BISS) transistor Rev. 01 19 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4330PA. 1.2 Features and benefits... See More ⇒

 4.2. Size:704K  nxp

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PBSS5330PAS

PBSS5330PA 30 V, 3 A PNP low VCEsat (BISS) transistor 7 April 2015 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement PBSS4330PA. 2. Features and benefits Low collector-emitter saturatio... See More ⇒

 6.1. Size:189K  philips

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PBSS5330PAS

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5330X 30 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet 2004 Nov 03 Supersedes data of 2003 Nov 28 NXP Semiconductors Product data sheet 30 V, 3 A PBSS5330X PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT89 (SC-62) package SYMBOL PARAMETER MAX. UNIT Low collector-emitter sat... See More ⇒

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Detailed specifications: PBSS5160QA, PBSS5160T-HF, PBSS5230PAP, PBSS5230QA, PBSS5240X, PBSS5240Z, PBSS5260PAP, PBSS5260QA, 2SD669, PBSS5360Z, KSA614F, KSB13002AR, KSB13003A, KSB13003AR, KSB13003C, KSB13003CR, KSB13003ER

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