MD2009DFP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MD2009DFPHigh voltage NPN power transistor for CRT TVFeatures State-of-the-art technology: diffused collector enhanced generation Stable performance versus operating temperature variation Low base drive requirement3 Tight hFE range at operating collector current21 Fully isolated power package UL compliantTO-220FP Integrated free wheeling di

MD2009DFXHigh voltage NPN power transistor for CRT TVFeatures State-of-the-art technology: diffused collector enhanced generation Stable performance versus operating temperature variation Low base drive requirement Tight hFE range at operating collector current32 Fully isolated power package UL compliant1 Integrated free wheeling diodeTO-3P

MD2001FXHigh voltage NPN power transistor for standarddefinition CRT displayFeatures State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirements32 Tight hFE range at operating collector current1 Fully insulated power package U.L. compliantISOWATT218F

PMD2001DMOSFET driverRev. 02 28 August 2009 Product data sheet1. Product profile1.1 General descriptionNPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package.1.2 Features Switching transistors in push-pull configuration Application-optimized pinout Space-saving solution Internal connections to minimize layo

WPMD2008WPMD2008Http://www.sh-willsemi.com 4Dual P-Channel, -20 V, - .1A, Power MOSFET DescriptionThe WPMD2008 uses advanced trench technology and design toprovide excellent RDS(ON) with low gate charge. This device is suitablefor use in DC-DC conversion applications. Standard ProductWPMD2008 is Pb-free.FeaturesV R MAX(BR)DSS DS(on)110m @ -4.5V-20 V138m @ -2.5VPI

MPM B120RHMD200B NPT & R d Type 1200V leN Rugged e V IGBT ModulGeneral D on DescriptioFeaatures MagnaChips IGBT Mod package dule 7DM-3 p BVCES= 1200VV Lo n Loss : VCE(sa = 2.7V (typ.) ow Conductionat)devices are optimized to ses and o reduce lossast & Soft Anti-Parallel FWD Fa D Sh ed : Min. 10ushort circuit rate s at TC=100 switch