Биполярный транзистор MD2009DFP - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MD2009DFP
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 5
Корпус транзистора: TO-220FP
Аналоги (замена) для MD2009DFP
MD2009DFP Datasheet (PDF)
md2009dfp.pdf
MD2009DFPHigh voltage NPN power transistor for CRT TVFeatures State-of-the-art technology: diffused collector enhanced generation Stable performance versus operating temperature variation Low base drive requirement3 Tight hFE range at operating collector current21 Fully isolated power package UL compliantTO-220FP Integrated free wheeling di
md2009dfx.pdf
MD2009DFXHigh voltage NPN power transistor for CRT TVFeatures State-of-the-art technology: diffused collector enhanced generation Stable performance versus operating temperature variation Low base drive requirement Tight hFE range at operating collector current32 Fully isolated power package UL compliant1 Integrated free wheeling diodeTO-3P
md2001fx.pdf
MD2001FXHigh voltage NPN power transistor for standarddefinition CRT displayFeatures State-of-the-art technology: Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirements32 Tight hFE range at operating collector current1 Fully insulated power package U.L. compliantISOWATT218F
pmd2001d.pdf
PMD2001DMOSFET driverRev. 02 28 August 2009 Product data sheet1. Product profile1.1 General descriptionNPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package.1.2 Features Switching transistors in push-pull configuration Application-optimized pinout Space-saving solution Internal connections to minimize layo
wpmd2008.pdf
WPMD2008WPMD2008Http://www.sh-willsemi.com 4Dual P-Channel, -20 V, - .1A, Power MOSFET DescriptionThe WPMD2008 uses advanced trench technology and design toprovide excellent RDS(ON) with low gate charge. This device is suitablefor use in DC-DC conversion applications. Standard ProductWPMD2008 is Pb-free.FeaturesV R MAX(BR)DSS DS(on)110m @ -4.5V-20 V138m @ -2.5VPI
mpmd200b120rh.pdf
MPM B120RHMD200B NPT & R d Type 1200V leN Rugged e V IGBT ModulGeneral D on DescriptioFeaatures MagnaChips IGBT Mod package dule 7DM-3 p BVCES= 1200VV Lo n Loss : VCE(sa = 2.7V (typ.) ow Conductionat)devices are optimized to ses and o reduce lossast & Soft Anti-Parallel FWD Fa D Sh ed : Min. 10ushort circuit rate s at TC=100 switch
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050