MD2009DFP datasheet и подбор замены

 ..1. Size:263K  st
 md2009dfp.pdf 

MD2009DFP High voltage NPN power transistor for CRT TV Features State-of-the-art technology diffused collector enhanced generation Stable performance versus operating temperature variation Low base drive requirement 3 Tight hFE range at operating collector current 2 1 Fully isolated power package UL compliant TO-220FP Integrated free wheeling di

 6.1. Size:205K  st
 md2009dfx.pdf 

MD2009DFX High voltage NPN power transistor for CRT TV Features State-of-the-art technology diffused collector enhanced generation Stable performance versus operating temperature variation Low base drive requirement Tight hFE range at operating collector current 3 2 Fully isolated power package UL compliant 1 Integrated free wheeling diode TO-3P

 9.1. Size:210K  st
 md2001fx.pdf 

MD2001FX High voltage NPN power transistor for standard definition CRT display Features State-of-the-art technology Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirements 3 2 Tight hFE range at operating collector current 1 Fully insulated power package U.L. compliant ISOWATT218F

 9.2. Size:174K  nxp
 pmd2001d.pdf 

PMD2001D MOSFET driver Rev. 02 28 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. 1.2 Features Switching transistors in push-pull configuration Application-optimized pinout Space-saving solution Internal connections to minimize layo

 9.3. Size:817K  willsemi
 wpmd2008.pdf 

WPMD2008 WPMD2008 Http //www.sh-willsemi.com 4 Dual P-Channel, -20 V, - .1A, Power MOSFET Description The WPMD2008 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WPMD2008 is Pb-free. Features V R MAX (BR)DSS DS(on) 110m @ -4.5V -20 V 138m @ -2.5V PI

 9.4. Size:324K  magnachip
 mpmd200b120rh.pdf 

MPM B120RH MD200B NPT & R d Type 1200V le N Rugged e V IGBT Modul General D on Descriptio Fea atures MagnaChip s IGBT Mod package dule 7DM-3 p BVCES= 1200V V Lo n Loss VCE(sa = 2.7V (typ.) ow Conduction at) devices are optimized to ses and o reduce loss ast & Soft Anti-Parallel FWD Fa D Sh ed Min. 10us hort circuit rate s at TC=100 switch