MD6002FHXV Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MD6002FHXV 📄📄
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 100
Encapsulados: 610A-04
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MD6002FHXV datasheet
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NIMD6001N, NIMD6001AN Dual N-Channel Driver with Diagnostic Output 60 V, 3 A, 110 mW NIMD6001N/AN is a dual 3 Amp low-side switch with an integrated common disable input and drain diagnostic output. Pulling http //onsemi.com the Disable pin low will override any applied gate voltages and turn off both FET switches. Should either Drain-Source voltage exceed 3.0 AMPERES approximately 50
nimd6001n.pdf
NIMD6001N, NIMD6001AN Dual N-Channel Driver with Diagnostic Output 60 V, 3 A, 110 mW NIMD6001N/AN is a dual 3 Amp low-side switch with an integrated common disable input and drain diagnostic output. Pulling http //onsemi.com the Disable pin low will override any applied gate voltages and turn off both FET switches. Should either Drain-Source voltage exceed 3.0 AMPERES approximately 50
wnmd6003.pdf
WNMD6003 WNMD6003 Dual N-Channel, 60V, 0.30A, Power MOSFET Http// www.sh-willsemi.com VDS (V) Rds(on) ( ) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating 2000V HBM SOT-563 Descriptions The WNMD6003 is Dual N-Channel enhancem -ent MOS Field Effect Transistor. Uses advanced D1 G2 S2 trench technology and design to provide excellent 6 5 4 RDS (ON) with low gate charge. This d
Otros transistores... MD3250A, MD3250AF, MD3251A, MD3251AF, MD3251AFHXV, MD3251AHX, MD3468FHXV, MD3468HX, 2SD2499, MD6002HX, MD7002A, MD7002B, MD7003A, MD7003AF, MD7003B, MD708B, MD918A
Parámetros del transistor bipolar y su interrelación.
History: KRC822F
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