VT6T11 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VT6T11  📄📄 

Código: T11

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 350 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: VMT6

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VT6T11 datasheet

 ..1. Size:124K  rohm
 vt6t11.pdf pdf_icon

VT6T11

Power management (dual transistors) VT6T11 Structure Dimensions (Unit mm) PNP silicon epitaxial planar transistor VMT6 0.5 0.1 1.2 0.1 (6) (5) (4) Features 0 0.05 1) Very small package with two transistors. (1) (2) (3) 2) Suitable for current mirror circuits. 0.16 0.05 0.13 0.05 0.4 0.4 0.8 0.1 Applications Current mirror circuits Abbreviated

 9.1. Size:1237K  rohm
 vt6t1.pdf pdf_icon

VT6T11

VT6T1 / EMT51 Datasheet General purpose transister (isolated dual transistors) lOutline l Parameter Tr1 and Tr2 VMT6 EMT6 VCEO -20V IC -200mA VT6T1 EMT51 (SC-107C) lFeatures lInner circuit l l 1) General Purpose. 2) Two 2SAR522 chips in one package. 3) Transiste

 9.2. Size:123K  rohm
 vt6t12.pdf pdf_icon

VT6T11

Power management (dual transistors) VT6T12 Structure Dimensions (Unit mm) PNP silicon epitaxial planar transistor VMT6 0.5 0.1 1.2 0.1 (6) (5) (4) Features 0 0.05 1) Very small package with two transistors. (1) (2) (3) 2) Suitable for current mirror circuits. 0.16 0.05 0.13 0.05 0.4 0.4 0.8 0.1 Applications Abbreviated symbol T12 Current mirr

Otros transistores... US6T8, US6T9, US6X7, US6X8, UT3PP, UTV020, UTV040, VT6T1, MJE350, VT6T12, VT6T2, VT6X1, VT6X11, VT6X12, VT6X2, VT6Z1, VT6Z2