VT6T11 Datasheet, Equivalent, Cross Reference Search
Type Designator: VT6T11
SMD Transistor Code: T11
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 350 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: VMT6
VT6T11 Transistor Equivalent Substitute - Cross-Reference Search
VT6T11 Datasheet (PDF)
vt6t11.pdf
Power management (dual transistors) VT6T11 Structure Dimensions (Unit : mm) PNP silicon epitaxial planar transistor VMT60.5 0.11.2 0.1 (6) (5) (4) Features 0 ~ 0.051) Very small package with two transistors. (1) (2) (3)2) Suitable for current mirror circuits. 0.16 0.050.13 0.050.4 0.40.8 0.1 Applications Current mirror circuits Abbreviated
vt6t1.pdf
VT6T1 / EMT51DatasheetGeneral purpose transister (isolated dual transistors)lOutlinelParameter Tr1 and Tr2 VMT6 EMT6VCEO-20VIC-200mA VT6T1 EMT51(SC-107C) lFeatures lInner circuitl l1) General Purpose.2) Two 2SAR522 chips in one package.3) Transiste
vt6t12.pdf
Power management (dual transistors) VT6T12 Structure Dimensions (Unit : mm) PNP silicon epitaxial planar transistor VMT60.5 0.11.2 0.1 (6) (5) (4) Features 0 ~ 0.051) Very small package with two transistors. (1) (2) (3)2) Suitable for current mirror circuits. 0.16 0.050.13 0.050.4 0.40.8 0.1 Applications Abbreviated symbol : T12Current mirr
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
