VT6T12 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VT6T12  📄📄 

Código: T12

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 300 MHz

Capacitancia de salida (Cc): 2 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: VMT6

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VT6T12 datasheet

 ..1. Size:123K  rohm
 vt6t12.pdf pdf_icon

VT6T12

Power management (dual transistors) VT6T12 Structure Dimensions (Unit mm) PNP silicon epitaxial planar transistor VMT6 0.5 0.1 1.2 0.1 (6) (5) (4) Features 0 0.05 1) Very small package with two transistors. (1) (2) (3) 2) Suitable for current mirror circuits. 0.16 0.05 0.13 0.05 0.4 0.4 0.8 0.1 Applications Abbreviated symbol T12 Current mirr

 9.1. Size:1237K  rohm
 vt6t1.pdf pdf_icon

VT6T12

VT6T1 / EMT51 Datasheet General purpose transister (isolated dual transistors) lOutline l Parameter Tr1 and Tr2 VMT6 EMT6 VCEO -20V IC -200mA VT6T1 EMT51 (SC-107C) lFeatures lInner circuit l l 1) General Purpose. 2) Two 2SAR522 chips in one package. 3) Transiste

 9.2. Size:124K  rohm
 vt6t11.pdf pdf_icon

VT6T12

Power management (dual transistors) VT6T11 Structure Dimensions (Unit mm) PNP silicon epitaxial planar transistor VMT6 0.5 0.1 1.2 0.1 (6) (5) (4) Features 0 0.05 1) Very small package with two transistors. (1) (2) (3) 2) Suitable for current mirror circuits. 0.16 0.05 0.13 0.05 0.4 0.4 0.8 0.1 Applications Current mirror circuits Abbreviated

Otros transistores... US6T9, US6X7, US6X8, UT3PP, UTV020, UTV040, VT6T1, VT6T11, D882P, VT6T2, VT6X1, VT6X11, VT6X12, VT6X2, VT6Z1, VT6Z2, WBD13003D