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VT6T12 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: VT6T12
   Código: T12
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 300 MHz
   Capacitancia de salida (Cc): 2 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: VMT6
 

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VT6T12 Datasheet (PDF)

 ..1. Size:123K  rohm
 vt6t12.pdf pdf_icon

VT6T12

Power management (dual transistors) VT6T12 Structure Dimensions (Unit : mm) PNP silicon epitaxial planar transistor VMT60.5 0.11.2 0.1 (6) (5) (4) Features 0 ~ 0.051) Very small package with two transistors. (1) (2) (3)2) Suitable for current mirror circuits. 0.16 0.050.13 0.050.4 0.40.8 0.1 Applications Abbreviated symbol : T12Current mirr

 9.1. Size:1237K  rohm
 vt6t1.pdf pdf_icon

VT6T12

VT6T1 / EMT51DatasheetGeneral purpose transister (isolated dual transistors)lOutlinelParameter Tr1 and Tr2 VMT6 EMT6VCEO-20VIC-200mA VT6T1 EMT51(SC-107C) lFeatures lInner circuitl l1) General Purpose.2) Two 2SAR522 chips in one package.3) Transiste

 9.2. Size:124K  rohm
 vt6t11.pdf pdf_icon

VT6T12

Power management (dual transistors) VT6T11 Structure Dimensions (Unit : mm) PNP silicon epitaxial planar transistor VMT60.5 0.11.2 0.1 (6) (5) (4) Features 0 ~ 0.051) Very small package with two transistors. (1) (2) (3)2) Suitable for current mirror circuits. 0.16 0.050.13 0.050.4 0.40.8 0.1 Applications Current mirror circuits Abbreviated

Otros transistores... US6T9 , US6X7 , US6X8 , UT3PP , UTV020 , UTV040 , VT6T1 , VT6T11 , TIP36C , VT6T2 , VT6X1 , VT6X11 , VT6X12 , VT6X2 , VT6Z1 , VT6Z2 , WBD13003D .

History: BCX40-6 | NPS1613A | 2N991 | 2N2808A | BC270 | 2SD1624-R | 2N6199

 

 
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