VT6T12 Datasheet. Specs and Replacement

Type Designator: VT6T12  📄📄 

SMD Transistor Code: T12

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: VMT6

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VT6T12 datasheet

 ..1. Size:123K  rohm

 vt6t12.pdf pdf_icon

VT6T12

Power management (dual transistors) VT6T12 Structure Dimensions (Unit mm) PNP silicon epitaxial planar transistor VMT6 0.5 0.1 1.2 0.1 (6) (5) (4) Features 0 0.05 1) Very small package with two transistors. (1) (2) (3) 2) Suitable for current mirror circuits. 0.16 0.05 0.13 0.05 0.4 0.4 0.8 0.1 Applications Abbreviated symbol T12 Current mirr... See More ⇒

 9.1. Size:1237K  rohm

 vt6t1.pdf pdf_icon

VT6T12

VT6T1 / EMT51 Datasheet General purpose transister (isolated dual transistors) lOutline l Parameter Tr1 and Tr2 VMT6 EMT6 VCEO -20V IC -200mA VT6T1 EMT51 (SC-107C) lFeatures lInner circuit l l 1) General Purpose. 2) Two 2SAR522 chips in one package. 3) Transiste... See More ⇒

 9.2. Size:124K  rohm

 vt6t11.pdf pdf_icon

VT6T12

Power management (dual transistors) VT6T11 Structure Dimensions (Unit mm) PNP silicon epitaxial planar transistor VMT6 0.5 0.1 1.2 0.1 (6) (5) (4) Features 0 0.05 1) Very small package with two transistors. (1) (2) (3) 2) Suitable for current mirror circuits. 0.16 0.05 0.13 0.05 0.4 0.4 0.8 0.1 Applications Current mirror circuits Abbreviated ... See More ⇒

Detailed specifications: US6T9, US6X7, US6X8, UT3PP, UTV020, UTV040, VT6T1, VT6T11, D882P, VT6T2, VT6X1, VT6X11, VT6X12, VT6X2, VT6Z1, VT6Z2, WBD13003D

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