VT6X12 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VT6X12  📄📄 

Código: X12

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 350 MHz

Capacitancia de salida (Cc): 1.6 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: VMT6

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VT6X12 datasheet

 ..1. Size:123K  rohm
 vt6x12.pdf pdf_icon

VT6X12

Power management (dual transistors) VT6X12 Structure Dimensions (Unit mm) NPN silicon epitaxial planar transistor VMT6 0.5 0.1 1.2 0.1 (6) (5) (4) Features 0 0.05 1) Very small package with two transistors. (1) (2) (3) 2) Suitable for current mirror circuits. 0.16 0.05 0.13 0.05 0.4 0.4 0.8 0.1 Applications Current mirror circuits Abbreviated

 9.1. Size:1221K  rohm
 vt6x1.pdf pdf_icon

VT6X12

VT6X1 / EMX51 Datasheet Power management (dual transistors) lOutline l Parameter Tr1 and Tr2 VMT6 EMT6 VCEO 20V IC 200mA VT6X1 EMX51 (SC-107C) lFeatures lInner circuit l l 1) General Purpose. 2) Two 2SCR522 chips in one package. 3) Transister elements are indepe

 9.2. Size:121K  rohm
 vt6x11.pdf pdf_icon

VT6X12

Power management (dual transistors) VT6X11 Structure Dimensions (Unit mm) NPN silicon epitaxial planar transistor VMT6 0.5 0.1 1.2 0.1 (6) (5) (4) Features 0 0.05 1) Very small package with two transistors. (1) (2) (3) 2) Suitable for current mirror circuits. 0.16 0.05 0.13 0.05 0.4 0.4 0.8 0.1 Applications Current mirror circuits Abbreviated

Otros transistores... UTV020, UTV040, VT6T1, VT6T11, VT6T12, VT6T2, VT6X1, VT6X11, A42, VT6X2, VT6Z1, VT6Z2, WBD13003D, WBN13002, WBN13002LD, WBN13003A1, WBN13003B