VT6X12 Datasheet. Specs and Replacement
Type Designator: VT6X12 📄📄
SMD Transistor Code: X12
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 350 MHz
Collector Capacitance (Cc): 1.6 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: VMT6
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VT6X12 datasheet
Power management (dual transistors) VT6X12 Structure Dimensions (Unit mm) NPN silicon epitaxial planar transistor VMT6 0.5 0.1 1.2 0.1 (6) (5) (4) Features 0 0.05 1) Very small package with two transistors. (1) (2) (3) 2) Suitable for current mirror circuits. 0.16 0.05 0.13 0.05 0.4 0.4 0.8 0.1 Applications Current mirror circuits Abbreviated ... See More ⇒
VT6X1 / EMX51 Datasheet Power management (dual transistors) lOutline l Parameter Tr1 and Tr2 VMT6 EMT6 VCEO 20V IC 200mA VT6X1 EMX51 (SC-107C) lFeatures lInner circuit l l 1) General Purpose. 2) Two 2SCR522 chips in one package. 3) Transister elements are indepe... See More ⇒
Power management (dual transistors) VT6X11 Structure Dimensions (Unit mm) NPN silicon epitaxial planar transistor VMT6 0.5 0.1 1.2 0.1 (6) (5) (4) Features 0 0.05 1) Very small package with two transistors. (1) (2) (3) 2) Suitable for current mirror circuits. 0.16 0.05 0.13 0.05 0.4 0.4 0.8 0.1 Applications Current mirror circuits Abbreviated ... See More ⇒
Detailed specifications: UTV020, UTV040, VT6T1, VT6T11, VT6T12, VT6T2, VT6X1, VT6X11, A42, VT6X2, VT6Z1, VT6Z2, WBD13003D, WBN13002, WBN13002LD, WBN13003A1, WBN13003B
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