WBN13003B2D Todos los transistores

 

WBN13003B2D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WBN13003B2D
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 15 W
   Tensión colector-base (Vcb): 600 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 9 V
   Corriente del colector DC máxima (Ic): 1.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 5 MHz
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO-92

 Búsqueda de reemplazo de transistor bipolar WBN13003B2D

 

WBN13003B2D Datasheet (PDF)

 ..1. Size:308K  winsemi
wbn13003b2d.pdf

WBN13003B2D
WBN13003B2D

WBN13003B2DWBN13003B2DWBN13003B2DWBN13003B2DHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switching modepower supply.

 5.1. Size:268K  winsemi
wbn13003b.pdf

WBN13003B2D
WBN13003B2D

WBN13003BWBN13003BWBN13003BWBN13003BHighVoltageFast-SwitchingNPNPowerTransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Parameter Tes

 6.1. Size:468K  winsemi
wbn13003a1.pdf

WBN13003B2D
WBN13003B2D

WBN13003A1WBN13003A1WBN13003A1WBN13003A1High Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedswitching Characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Par

 7.1. Size:378K  winsemi
wbn13002.pdf

WBN13003B2D
WBN13003B2D

WBN13002WBN13002WBN13002WBN13002High Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system, switching modepower supply.Absolute Maximum RatingsSymbol Parameter T

 7.2. Size:317K  winsemi
wbn13002ld.pdf

WBN13003B2D
WBN13003B2D

WBN13002LDWBN13002LDWBN13002LDWBN13002LDHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedSwitching characteristics required such as lightingsystem, switching mode power supply.Absolute Maximum RatingsSymbol P

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D

 

 

 
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