Справочник транзисторов. WBN13003B2D

 

Биполярный транзистор WBN13003B2D - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: WBN13003B2D
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 15 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 600 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
   Макcимальный постоянный ток коллектора (Ic): 1.2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 5 MHz
   Статический коэффициент передачи тока (hfe): 10
   Корпус транзистора: TO-92

 Аналоги (замена) для WBN13003B2D

 

 

WBN13003B2D Datasheet (PDF)

 ..1. Size:308K  winsemi
wbn13003b2d.pdf

WBN13003B2D WBN13003B2D

WBN13003B2DWBN13003B2DWBN13003B2DWBN13003B2DHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA Built-in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system,switching modepower supply.

 5.1. Size:268K  winsemi
wbn13003b.pdf

WBN13003B2D WBN13003B2D

WBN13003BWBN13003BWBN13003BWBN13003BHighVoltageFast-SwitchingNPNPowerTransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Parameter Tes

 6.1. Size:468K  winsemi
wbn13003a1.pdf

WBN13003B2D WBN13003B2D

WBN13003A1WBN13003A1WBN13003A1WBN13003A1High Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedswitching Characteristics required such as lightingsystem,switching mode power supply.Absolute Maximum RatingsSymbol Par

 7.1. Size:378K  winsemi
wbn13002.pdf

WBN13003B2D WBN13003B2D

WBN13002WBN13002WBN13002WBN13002High Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speed switchingcharacteristics required such as lighting system, switching modepower supply.Absolute Maximum RatingsSymbol Parameter T

 7.2. Size:317K  winsemi
wbn13002ld.pdf

WBN13003B2D WBN13003B2D

WBN13002LDWBN13002LDWBN13002LDWBN13002LDHigh Voltage Fast -Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage , High speedSwitching characteristics required such as lightingsystem, switching mode power supply.Absolute Maximum RatingsSymbol P

Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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