FHD100 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FHD100  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 500

Encapsulados: TO-3

  📄📄 Copiar 

 Búsqueda de reemplazo de FHD100

- Selecciónⓘ de transistores por parámetros

 

FHD100 datasheet

 ..1. Size:24K  shaanxi
 fhd100.pdf pdf_icon

FHD100

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China FHD100 NPN Silicon Darlington High Power Transistor Features 1. Using triple-diffusion process.High output current. Small driving power. 2. Highest amplification factor. High inverse voltage. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for current output,voltage adjustment a

 0.1. Size:767K  feihonltd
 fhu100n03c fhd100n03c fhp100n03c.pdf pdf_icon

FHD100

N N-CHANNEL MOSFET FHU100N03C/FHD100N03C/FHP100N03C MAIN CHARACTERISTICS FEATURES ID 100 A Low gate charge VDSS 30 V Crss ( 261pF) Low Crss (typical 261pF ) Rdson-typ @Vgs=10V 3.7m Fast switching Rdson-typ @Vgs=4.5V 5.1m 100% 100% avala

 0.2. Size:757K  feihonltd
 fhu100n03b fhd100n03b fhp100n03b.pdf pdf_icon

FHD100

N N-CHANNEL MOSFET FHU100N03B/FHD100N03B/FHP100N03B MAIN CHARACTERISTICS FEATURES ID 100 A Low gate charge VDSS 30 V Crss ( 261pF) Low Crss (typical 261pF ) Rdson-typ @Vgs=10V 4.9m Fast switching Rdson-typ @Vgs=4.5V 7.2m 100% 100% avala

 0.3. Size:1061K  feihonltd
 fhu100n03a fhd100n03a.pdf pdf_icon

FHD100

2 1

MOSTRAR MÁS

Otros transistores... FHC50, FHC6287, FHC70, FHD010, FHD020, FHD030, FHD050, FHD075, D965, FHD11032, FHD122, FHD128B, FHD150, FHD228G, FHD30, FHD4035, FHD491