All Transistors. FHD100 Datasheet

 

FHD100 Datasheet and Replacement


   Type Designator: FHD100
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 500
   Noise Figure, dB: -
   Package: TO-3
 

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FHD100 Datasheet (PDF)

 ..1. Size:24K  shaanxi
 fhd100.pdf pdf_icon

FHD100

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China FHD100NPN Silicon Darlington High Power Transistor Features: 1. Using triple-diffusion process.High output current. Small driving power. 2. Highest amplification factor. High inverse voltage. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for current output,voltage adjustment a

 0.1. Size:767K  feihonltd
 fhu100n03c fhd100n03c fhp100n03c.pdf pdf_icon

FHD100

N N-CHANNEL MOSFET FHU100N03C/FHD100N03C/FHP100N03C MAIN CHARACTERISTICS FEATURES ID 100 A Low gate charge VDSS 30 V Crss ( 261pF) Low Crss (typical 261pF ) Rdson-typ @Vgs=10V 3.7m Fast switching Rdson-typ @Vgs=4.5V 5.1m 100% 100% avala

 0.2. Size:757K  feihonltd
 fhu100n03b fhd100n03b fhp100n03b.pdf pdf_icon

FHD100

N N-CHANNEL MOSFET FHU100N03B/FHD100N03B/FHP100N03B MAIN CHARACTERISTICS FEATURES ID 100 A Low gate charge VDSS 30 V Crss ( 261pF) Low Crss (typical 261pF ) Rdson-typ @Vgs=10V 4.9m Fast switching Rdson-typ @Vgs=4.5V 7.2m 100% 100% avala

 0.3. Size:1061K  feihonltd
 fhu100n03a fhd100n03a.pdf pdf_icon

FHD100

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Datasheet: FHC50 , FHC6287 , FHC70 , FHD010 , FHD020 , FHD030 , FHD050 , FHD075 , NJW0281G , FHD11032 , FHD122 , FHD128B , FHD150 , FHD228G , FHD30 , FHD4035 , FHD491 .

History: FCR520B

Keywords - FHD100 transistor datasheet

 FHD100 cross reference
 FHD100 equivalent finder
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