FHD100 Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

FHD100 Datasheet. Specs and Replacement

Type Designator: FHD100 📄📄

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 500

Noise Figure, dB: -

Package: TO-3

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FHD100 Substitution

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FHD100 datasheet

..1. Size:24K shaanxi

fhd100.pdf pdf_icon

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China FHD100 NPN Silicon Darlington High Power Transistor Features 1. Using triple-diffusion process.High output current. Small driving power. 2. Highest amplification factor. High inverse voltage. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for current output,voltage adjustment a... See More ⇒

0.1. Size:767K feihonltd

fhu100n03c fhd100n03c fhp100n03c.pdf pdf_icon

N N-CHANNEL MOSFET FHU100N03C/FHD100N03C/FHP100N03C MAIN CHARACTERISTICS FEATURES ID 100 A Low gate charge VDSS 30 V Crss ( 261pF) Low Crss (typical 261pF ) Rdson-typ @Vgs=10V 3.7m Fast switching Rdson-typ @Vgs=4.5V 5.1m 100% 100% avala... See More ⇒

0.2. Size:757K feihonltd

fhu100n03b fhd100n03b fhp100n03b.pdf pdf_icon

N N-CHANNEL MOSFET FHU100N03B/FHD100N03B/FHP100N03B MAIN CHARACTERISTICS FEATURES ID 100 A Low gate charge VDSS 30 V Crss ( 261pF) Low Crss (typical 261pF ) Rdson-typ @Vgs=10V 4.9m Fast switching Rdson-typ @Vgs=4.5V 7.2m 100% 100% avala... See More ⇒

0.3. Size:1061K feihonltd

fhu100n03a fhd100n03a.pdf pdf_icon