DMA30401 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DMA30401Total pages pageTentativeDMA30401Silicon PNP epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For general amplificationMarking Symbol : A7Package Code : SSSMini6-F2-BInternal Connection6 5 4Absolute Maximum RatingsTa = 25 CParameter Symbol Rating UnitCollector-base voltage (Emitter open) VCBO -60 VCollector-emitter voltage (Base open) VC

December 2008FDMA3023PZtmDual P-Channel PowerTrench MOSFET -30 V, -2.9 A, 90 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 90 m at VGS = -4.5 V, ID = -2.9 Afor the battery charge switch in cellular handset and other Max rDS(on) = 130 m at VGS = -2.5 V, ID = -2.6 Aultra-portable applications. It featu

June 2012FDMA3027PZDual P-Channel PowerTrench MOSFET -30 V, -3.3 A, 87 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 87 m at VGS = -10 V, ID = -3.3 Afor dual switching requirements such as gate driver for larger Max rDS(on) = 152 m at VGS = -4.5 V, ID = -2.3 AMosfets. It features two independent P-Channel

June 2011FDMA3028NDual N-Channel PowerTrench MOSFET 30 V, 3.8 A, 68 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 68 m at VGS = 4.5 V, ID = 3.8 Afor dual switching requirements in cellular handset and other Max rDS(on) = 88 m at VGS = 2.5 V, ID = 3.4 Aultra-portable applications. It features two independe