DMA30401 Datasheet. Equivalente

 ..1. Size:218K  panasonic
 dma30401.pdf

DMA30401 Total pages page Tentative DMA30401 Silicon PNP epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For general amplification Marking Symbol A7 Package Code SSSMini6-F2-B Internal Connection 6 5 4 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -60 V Collector-emitter voltage (Base open) VC

 9.1. Size:324K  fairchild semi
 fdma3023pz.pdf

December 2008 FDMA3023PZ tm Dual P-Channel PowerTrench MOSFET -30 V, -2.9 A, 90 m Features General Description This device is designed specifically as a single package solution Max rDS(on) = 90 m at VGS = -4.5 V, ID = -2.9 A for the battery charge switch in cellular handset and other Max rDS(on) = 130 m at VGS = -2.5 V, ID = -2.6 A ultra-portable applications. It featu

 9.2. Size:300K  fairchild semi
 fdma3027pz.pdf

June 2012 FDMA3027PZ Dual P-Channel PowerTrench MOSFET -30 V, -3.3 A, 87 m Features General Description This device is designed specifically as a single package solution Max rDS(on) = 87 m at VGS = -10 V, ID = -3.3 A for dual switching requirements such as gate driver for larger Max rDS(on) = 152 m at VGS = -4.5 V, ID = -2.3 A Mosfets. It features two independent P-Channel

 9.3. Size:292K  fairchild semi
 fdma3028n.pdf

June 2011 FDMA3028N Dual N-Channel PowerTrench MOSFET 30 V, 3.8 A, 68 m Features General Description This device is designed specifically as a single package solution Max rDS(on) = 68 m at VGS = 4.5 V, ID = 3.8 A for dual switching requirements in cellular handset and other Max rDS(on) = 88 m at VGS = 2.5 V, ID = 3.4 A ultra-portable applications. It features two independe