DMA30401 - параметры, поиск аналогов, даташиты транзистора

DMA30401 Datasheet (PDF)

..1. Size:218K panasonic
dma30401.pdf pdf_icon

DMA30401Total pages pageTentativeDMA30401Silicon PNP epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For general amplificationMarking Symbol : A7Package Code : SSSMini6-F2-BInternal Connection6 5 4Absolute Maximum RatingsTa = 25 CParameter Symbol Rating UnitCollector-base voltage (Emitter open) VCBO -60 VCollector-emitter voltage (Base open) VC

9.1. Size:324K fairchild semi
fdma3023pz.pdf pdf_icon

December 2008FDMA3023PZtmDual P-Channel PowerTrench MOSFET -30 V, -2.9 A, 90 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 90 m at VGS = -4.5 V, ID = -2.9 Afor the battery charge switch in cellular handset and other Max rDS(on) = 130 m at VGS = -2.5 V, ID = -2.6 Aultra-portable applications. It featu

9.2. Size:300K fairchild semi
fdma3027pz.pdf pdf_icon

June 2012FDMA3027PZDual P-Channel PowerTrench MOSFET -30 V, -3.3 A, 87 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 87 m at VGS = -10 V, ID = -3.3 Afor dual switching requirements such as gate driver for larger Max rDS(on) = 152 m at VGS = -4.5 V, ID = -2.3 AMosfets. It features two independent P-Channel

9.3. Size:292K fairchild semi
fdma3028n.pdf pdf_icon

June 2011FDMA3028NDual N-Channel PowerTrench MOSFET 30 V, 3.8 A, 68 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 68 m at VGS = 4.5 V, ID = 3.8 Afor dual switching requirements in cellular handset and other Max rDS(on) = 88 m at VGS = 2.5 V, ID = 3.4 Aultra-portable applications. It features two independe

Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .