DME20102 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DME20102  📄📄 

Código: B4

Material: Si

Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 130 MHz

Capacitancia de salida (Cc): 7.3 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT-753

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DME20102 datasheet

 ..1. Size:514K  panasonic
dme20102.pdf pdf_icon

DME20102

This product complies with the RoHS Directive (EU 2002/95/EC). DME20102 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of s

 7.1. Size:517K  panasonic
dme20101.pdf pdf_icon

DME20102

This product complies with the RoHS Directive (EU 2002/95/EC). DME20101 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of s

 9.1. Size:518K  panasonic
dme20c01.pdf pdf_icon

DME20102

This product complies with the RoHS Directive (EU 2002/95/EC). DME20C01 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of se

 9.2. Size:586K  panasonic
dme20501.pdf pdf_icon

DME20102

This product complies with the RoHS Directive (EU 2002/95/EC). DME20501 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets,

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