All Transistors. DME20102 Datasheet

 

DME20102 Datasheet and Replacement


   Type Designator: DME20102
   SMD Transistor Code: B4
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 130 MHz
   Collector Capacitance (Cc): 7.3 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT-753
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DME20102 Datasheet (PDF)

 ..1. Size:514K  panasonic
 dme20102.pdf pdf_icon

DME20102

This product complies with the RoHS Directive (EU 2002/95/EC).DME20102Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of s

 7.1. Size:517K  panasonic
 dme20101.pdf pdf_icon

DME20102

This product complies with the RoHS Directive (EU 2002/95/EC).DME20101Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of s

 9.1. Size:518K  panasonic
 dme20c01.pdf pdf_icon

DME20102

This product complies with the RoHS Directive (EU 2002/95/EC).DME20C01Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of se

 9.2. Size:586K  panasonic
 dme20501.pdf pdf_icon

DME20102

This product complies with the RoHS Directive (EU 2002/95/EC).DME20501Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets,

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Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SA1421 | BC530 | CP107 | 2STC4467 | KRA761U | 2N4021 | 2SB798DM

Keywords - DME20102 transistor datasheet

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