DME20501 Todos los transistores

 

DME20501 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DME20501
   Código: B1
   Material: Si
   Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 2 pF
   Ganancia de corriente contínua (hfe): 210
   Paquete / Cubierta: SOT-457
 

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DME20501 Datasheet (PDF)

 ..1. Size:586K  panasonic
 dme20501.pdf pdf_icon

DME20501

This product complies with the RoHS Directive (EU 2002/95/EC).DME20501Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets,

 9.1. Size:517K  panasonic
 dme20101.pdf pdf_icon

DME20501

This product complies with the RoHS Directive (EU 2002/95/EC).DME20101Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of s

 9.2. Size:518K  panasonic
 dme20c01.pdf pdf_icon

DME20501

This product complies with the RoHS Directive (EU 2002/95/EC).DME20C01Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of se

 9.3. Size:514K  panasonic
 dme20102.pdf pdf_icon

DME20501

This product complies with the RoHS Directive (EU 2002/95/EC).DME20102Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of s

MOSTRAR MÁS

Otros transistores... DMA30401 , DMA90401 , DMC30401 , DMC90401 , DMC904F0 , DMC904F1 , DME20101 , DME20102 , S9018 , DME20B01 , DME20C01 , DMG21401 , DMG50401 , DMG90401 , DMMT2907A , DMMT3904 , DMR935E1 .

 

 
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