All Transistors. DME20501 Datasheet

 

DME20501 Datasheet and Replacement


   Type Designator: DME20501
   SMD Transistor Code: B1
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 210
   Noise Figure, dB: -
   Package: SOT-457
 

 DME20501 Substitution

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DME20501 Datasheet (PDF)

 ..1. Size:586K  panasonic
 dme20501.pdf pdf_icon

DME20501

This product complies with the RoHS Directive (EU 2002/95/EC).DME20501Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets,

 9.1. Size:517K  panasonic
 dme20101.pdf pdf_icon

DME20501

This product complies with the RoHS Directive (EU 2002/95/EC).DME20101Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of s

 9.2. Size:518K  panasonic
 dme20c01.pdf pdf_icon

DME20501

This product complies with the RoHS Directive (EU 2002/95/EC).DME20C01Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of se

 9.3. Size:514K  panasonic
 dme20102.pdf pdf_icon

DME20501

This product complies with the RoHS Directive (EU 2002/95/EC).DME20102Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of s

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Datasheet: DMA30401 , DMA90401 , DMC30401 , DMC90401 , DMC904F0 , DMC904F1 , DME20101 , DME20102 , S9018 , DME20B01 , DME20C01 , DMG21401 , DMG50401 , DMG90401 , DMMT2907A , DMMT3904 , DMR935E1 .

History: 2SD313C

Keywords - DME20501 transistor datasheet

 DME20501 cross reference
 DME20501 equivalent finder
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