DME20C01 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DME20C01 📄📄
Código: A4
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 150 MHz
Capacitancia de salida (Cc): 2 pF
Ganancia de corriente contínua (hFE): 210
Encapsulados: SOT-753
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DME20C01 datasheet
dme20c01.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DME20C01 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of se
dme20101.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DME20101 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of s
dme20102.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DME20102 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of s
dme20501.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). DME20501 Silicon PNP epitaxial planar type (Tr1) Silicon NPN epitaxial planar type (Tr2) For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets,
Otros transistores... DMC30401, DMC90401, DMC904F0, DMC904F1, DME20101, DME20102, DME20501, DME20B01, BDT88, DMG21401, DMG50401, DMG90401, DMMT2907A, DMMT3904, DMR935E1, DMS935E1, DMS935E2
Parámetros del transistor bipolar y su interrelación.
History: KT6127J | KRX203E | BFS91B | KRC414V
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