DME20C01 Datasheet, Equivalent, Cross Reference Search
Type Designator: DME20C01
SMD Transistor Code: A4
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 210
Noise Figure, dB: -
Package: SOT-753
DME20C01 Transistor Equivalent Substitute - Cross-Reference Search
DME20C01 Datasheet (PDF)
dme20c01.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DME20C01Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of se
dme20101.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DME20101Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of s
dme20102.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DME20102Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of s
dme20501.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DME20501Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of sets,
dme20b01.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DME20B01Silicon PNP epitaxial planar type (Tr1)Silicon NPN epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of s
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
