EMF5 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: EMF5 📄📄
Código: F5
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 15 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 260 MHz
Capacitancia de salida (Cc): 6.5 pF
Ganancia de corriente contínua (hFE): 270
Encapsulados: SOT-563
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EMF5 datasheet
emf5.pdf
EMF5 Transistors Power management (dual transistors) EMF5 2SA2018 and DTC144EE are housed independently in a EMT6 package. Application Dimensions (Units mm) Power management circuit Features (4) ( ) 3 1) Power switching circuit in a single package. (5) (2) 2) Mounting cost and area can be cut in half. (6) (1) 1.2 1.6 Structure Silicon epitaxial planar transi
emf5.pdf
EMF5 General purpose transistors (dual transistors) FEATURES 2SA2018 and DTC144E are housed independently in a package. SOT-563 Mounting possible with SOT-563 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area be cut in half. 1 Marking F5 (3) (2) (1) Equivalent circuit DTr2 Tr1 R1 R2 (4) (5) (6) T
emf5xv6t5-d emf5xv6 emf5xv6t5g.pdf
EMF5XV6T5 Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com Features Simplifies Circuit Design (3) (2) (1) Reduces Board Space Reduces Component Count Q1 These are Pb-Free Devices Q2 MAXIMUM RATINGS R2 R1 Rating Symbol Value Unit (4) (5) (6) Q1 (TA = 25 C unless o
emf50n03js.pdf
EMF50N03JS N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 50m ID 3.5A G S Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 12 V TA = 25 C 3
Otros transistores... DMMT2907A, DMMT3904, DMR935E1, DMS935E1, DMS935E2, DTA114WCA, EMF23, EMF24, 2N3055, FJP13009H2TU, FJP1943, FJP2145, FJP2160D, FJP5200, FJPF2145, FJX992, FML10
Parámetros del transistor bipolar y su interrelación.
History: ECG10 | BFV98N | KRC831E | BFW41 | SK3441 | BFX34T | 2N5772
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