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EMF5 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: EMF5
   Código: F5
   Material: Si
   Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 15 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 260 MHz
   Capacitancia de salida (Cc): 6.5 pF
   Ganancia de corriente contínua (hfe): 270
   Paquete / Cubierta: SOT-563

 Búsqueda de reemplazo de transistor bipolar EMF5

 

EMF5 Datasheet (PDF)

 ..1. Size:84K  rohm
emf5.pdf

EMF5
EMF5

EMF5 Transistors Power management (dual transistors) EMF5 2SA2018 and DTC144EE are housed independently in a EMT6 package. Application Dimensions (Units : mm) Power management circuit Features (4) ( )31) Power switching circuit in a single package. (5) (2)2) Mounting cost and area can be cut in half. (6) (1)1.2 1.6 Structure Silicon epitaxial planar transi

 ..2. Size:529K  htsemi
emf5.pdf

EMF5
EMF5

EMF5 General purpose transistors (dual transistors)FEATURES 2SA2018 and DTC144E are housed independently in a package. SOT-563 Mounting possible with SOT-563 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area be cut in half. 1 Marking: F5 (3) (2) (1)Equivalent circuit DTr2 Tr1R1R2(4) (5) (6)T

 0.1. Size:69K  onsemi
emf5xv6t5-d emf5xv6 emf5xv6t5g.pdf

EMF5
EMF5

EMF5XV6T5Preferred DevicesPower Management,Dual TransistorsNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comFeatures Simplifies Circuit Design(3) (2) (1) Reduces Board Space Reduces Component CountQ1 These are Pb-Free DevicesQ2MAXIMUM RATINGSR2 R1Rating Symbol Value Unit(4) (5) (6)Q1 (TA = 25C unless o

 0.2. Size:182K  emc
emf50n03js.pdf

EMF5
EMF5

EMF50N03JSNChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:DBVDSS30VRDSON(MAX.)50mID3.5AGSPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TA=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS12VTA=25C3

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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History: 2SA496R

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