GSTSS8050 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GSTSS8050
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Ganancia de corriente contínua (hfe): 85
Paquete / Cubierta: TO-92
Búsqueda de reemplazo de transistor bipolar GSTSS8050
GSTSS8050 Datasheet (PDF)
gstss8050.pdf
GSTSS8050 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 25V amplifier and switch. Collector Current : 1.5A Lead(Pb)-FreePackages & Pin Assignments TO-92 Pin Description1 Emitter 2 Base 3 Collector Marking Information P/N Package Rank Part Marking GSTSS8050F TO-92 (B) / (C) / (
gstss8050lt1.pdf
GSTSS8050LT1 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 25V amplifier and switch. Collector-Base Voltage : 40V Collector Current : 1500mA Lead(Pb)-FreePackages & Pin Assignments SOT-23 Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Markin
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