GSTSS8050 Specs and Replacement
Type Designator: GSTSS8050
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 85
Package: TO-92
GSTSS8050 Substitution
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GSTSS8050 datasheet
GSTSS8050 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage 25V amplifier and switch. Collector Current 1.5A Lead(Pb)-Free Packages & Pin Assignments TO-92 Pin Description 1 Emitter 2 Base 3 Collector Marking Information P/N Package Rank Part Marking GSTSS8050F TO-92 (B) / (C) / (... See More ⇒
GSTSS8050LT1 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage 25V amplifier and switch. Collector-Base Voltage 40V Collector Current 1500mA Lead(Pb)-Free Packages & Pin Assignments SOT-23 Pin Description 1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Markin... See More ⇒
Detailed specifications: GSTMMBT2222A , GSTMMBT2907A , GSTMMBT3904 , GSTMMBT3906 , GSTMMBT5401 , GSTS772 , GSTS882 , GSTS9014LT1 , 8550 , GSTSS8050LT1 , LH8050PLT1G , LH8550PLT1G , LJ2015-52 , LMBT6429LT1G , LMBTA06UT1G , LMBTA06WT1G , LMBTA43LT1G .
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