LS313 Todos los transistores

 

LS313 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LS313

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 45 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.01 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 2 pF

Ganancia de corriente contínua (hFE): 400

Encapsulados: TO-78 TO-71

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LS313 datasheet

 ..1. Size:1427K  linear-systems
ls310 ls311 ls312 ls313.pdf pdf_icon

LS313

LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN hFE 200@10 A-1mA TO71 & TO78 TIGHT VBE MATCHING VBE1 -VBE1 = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 C (unless otherwise noted) 5 3 E2 E1 Collector 6 2 IC 10mA B2 B1 Current 7 1 Maximum Temperatures C2 C1 Storage Temperature -65 to +150 C

 0.1. Size:72K  philips
bls3135-20 1.pdf pdf_icon

LS313

DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D259 BLS3135-20 Microwave power transistor Product specification 2000 Feb 01 Philips Semiconductors Product specification Microwave power transistor BLS3135-20 FEATURES PINNING - SOT422A Suitable for short and medium pulse applications PIN DESCRIPTION Internal input and output matching networks for an easy 1 collector circuit

 0.2. Size:67K  philips
bls3135-50 2.pdf pdf_icon

LS313

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D259 BLS3135-50 Microwave power transistor Product specification 1999 Aug 16 Supersedes data of 1998 Apr 06 Philips Semiconductors Product specification Microwave power transistor BLS3135-50 FEATURES PINNING - SOT422A Suitable for short and medium pulse applications PIN DESCRIPTION Internal input and output matching netwo

 0.3. Size:72K  philips
bls3135-10 1.pdf pdf_icon

LS313

DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS3135-10 Microwave power transistor Product specification 2000 Feb 01 Philips Semiconductors Product specification Microwave power transistor BLS3135-10 FEATURES PINNING - SOT445C Suitable for short and medium pulse applications PIN DESCRIPTION Internal input and output matching networks for an easy 1 collector circuit design 2

Otros transistores... LMBTA56WT1G , LMSD1819A-RT1G , LS301 , LS302 , LS303 , LS310 , LS311 , LS312 , 2SD669A , LS3250A , LS3250B , LS3250C , LS350 , LS351 , LS352 , LS3550A , LS3550B .

 

 

 


 
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