LS313 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LS313
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.01 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Capacitancia de salida (Cc): 2 pF
Ganancia de corriente contínua (hfe): 400
Paquete / Cubierta: TO-78 TO-71
Búsqueda de reemplazo de transistor bipolar LS313
LS313 Datasheet (PDF)
ls310 ls311 ls312 ls313.pdf
LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN hFE200@10A-1mA TO71 & TO78TIGHT VBE MATCHING |VBE1 -VBE1| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25C (unless otherwise noted) 5 3E2 E1Collector 6 2IC 10mA B2 B1 Current 7 1Maximum Temperatures C2 C1Storage Temperature -65 to +150C
bls3135-20 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEET halfpageM3D259BLS3135-20Microwave power transistorProduct specification 2000 Feb 01Philips Semiconductors Product specificationMicrowave power transistor BLS3135-20FEATURES PINNING - SOT422A Suitable for short and medium pulse applicationsPIN DESCRIPTION Internal input and output matching networks for an easy1 collectorcircuit
bls3135-50 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D259BLS3135-50Microwave power transistorProduct specification 1999 Aug 16Supersedes data of 1998 Apr 06Philips Semiconductors Product specificationMicrowave power transistor BLS3135-50FEATURES PINNING - SOT422A Suitable for short and medium pulse applicationsPIN DESCRIPTION Internal input and output matching netwo
bls3135-10 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D324BLS3135-10Microwave power transistorProduct specification 2000 Feb 01Philips Semiconductors Product specificationMicrowave power transistor BLS3135-10FEATURES PINNING - SOT445C Suitable for short and medium pulse applicationsPIN DESCRIPTION Internal input and output matching networks for an easy1 collectorcircuit design2
bls3135-65 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D259BLS3135-65Microwave power transistorProduct specification 1999 Aug 16Supersedes data of 1999 May 01Philips Semiconductors Product specificationMicrowave power transistor BLS3135-65FEATURES PINNING - SOT422A Suitable for short and medium pulse applicationsPIN DESCRIPTION Internal input and output matching netwo
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: SGSF324
History: SGSF324
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050