All Transistors. LS313 Datasheet

 

LS313 Datasheet and Replacement


   Type Designator: LS313
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 400
   Noise Figure, dB: -
   Package: TO-78 TO-71
      - BJT Cross-Reference Search

   

LS313 Datasheet (PDF)

 ..1. Size:1427K  linear-systems
 ls310 ls311 ls312 ls313.pdf pdf_icon

LS313

LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN hFE200@10A-1mA TO71 & TO78TIGHT VBE MATCHING |VBE1 -VBE1| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25C (unless otherwise noted) 5 3E2 E1Collector 6 2IC 10mA B2 B1 Current 7 1Maximum Temperatures C2 C1Storage Temperature -65 to +150C

 0.1. Size:72K  philips
 bls3135-20 1.pdf pdf_icon

LS313

DISCRETE SEMICONDUCTORSDATA SHEET halfpageM3D259BLS3135-20Microwave power transistorProduct specification 2000 Feb 01Philips Semiconductors Product specificationMicrowave power transistor BLS3135-20FEATURES PINNING - SOT422A Suitable for short and medium pulse applicationsPIN DESCRIPTION Internal input and output matching networks for an easy1 collectorcircuit

 0.2. Size:67K  philips
 bls3135-50 2.pdf pdf_icon

LS313

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D259BLS3135-50Microwave power transistorProduct specification 1999 Aug 16Supersedes data of 1998 Apr 06Philips Semiconductors Product specificationMicrowave power transistor BLS3135-50FEATURES PINNING - SOT422A Suitable for short and medium pulse applicationsPIN DESCRIPTION Internal input and output matching netwo

 0.3. Size:72K  philips
 bls3135-10 1.pdf pdf_icon

LS313

DISCRETE SEMICONDUCTORSDATA SHEETM3D324BLS3135-10Microwave power transistorProduct specification 2000 Feb 01Philips Semiconductors Product specificationMicrowave power transistor BLS3135-10FEATURES PINNING - SOT445C Suitable for short and medium pulse applicationsPIN DESCRIPTION Internal input and output matching networks for an easy1 collectorcircuit design2

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC3489 | UN2123 | RT2P01M | DTA114TMFHA | CTP1732 | CP502 | MT4S03BU

Keywords - LS313 transistor datasheet

 LS313 cross reference
 LS313 equivalent finder
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