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MJ21193G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJ21193G
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 250 W
   Tensión colector-base (Vcb): 400 V
   Tensión colector-emisor (Vce): 250 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 16 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Capacitancia de salida (Cc): 500 pF
   Ganancia de corriente contínua (hfe): 8
   Paquete / Cubierta: TO3
 

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MJ21193G Datasheet (PDF)

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MJ21193G

MJ21193, MJ21194Preferred Device Silicon Power TransistorsThe MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.Featureshttp://onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc16 AMP COMPLEMENTARY

 7.1. Size:173K  motorola
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MJ21193G

Order this documentMOTOROLAby MJ21193/DSEMICONDUCTOR TECHNICAL DATAPNP*MJ21193NPNSilicon Power Transistors*MJ21194The MJ21193 and MJ21194 utilize Perforated Emitter technology and are*Motorola Preferred Devicespecifically designed for high power audio output, disk head positioners and linearapplications.16 AMPERECOMPLEMENTARY Total Harmonic Distortion Charac

 7.2. Size:122K  onsemi
mj21193 mj21194.pdf pdf_icon

MJ21193G

MJ21193 - PNPMJ21194 - NPNSilicon Power TransistorsThe MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMP COMPLEMENTARY High DC Current Gain SILICON POWER Excellent Gain Lin

 7.3. Size:167K  cn sptech
mj21193.pdf pdf_icon

MJ21193G

SPTECH Product SpecificationSilicon PNP Power Transistor MJ21193DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 25-75@I = -8A,V =-5VFE C CECollector-Emitter Saturation Voltage-: V )= -1.4 V(Max)@ I = -8ACE(sat CComplement to the NPN MJ21194APPLICATIONSDesigned for high power audio output, disk head positionersand other linear applications.ABSO

Otros transistores... MJ15004G , MJ15015G , MJ15016G , MJ15022G , MJ15023G , MJ15024G , MJ15025G , MJ16018-1400V , 2N3904 , MJ21194G , MJ21195G , MJ21196G , MJ2955G , MJ3055 , MJ4502G , MJ802G , MJ8100R .

 

 
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