All Transistors. MJ21193G Datasheet

 

MJ21193G Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJ21193G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 250 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 16 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 500 pF
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO3

 MJ21193G Transistor Equivalent Substitute - Cross-Reference Search

   

MJ21193G Datasheet (PDF)

 ..1. Size:153K  onsemi
mj21193g.pdf

MJ21193G MJ21193G

MJ21193, MJ21194Preferred Device Silicon Power TransistorsThe MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.Featureshttp://onsemi.com Total Harmonic Distortion Characterized High DC Current Gain - hFE = 25 Min @ IC = 8 Adc16 AMP COMPLEMENTARY

 7.1. Size:173K  motorola
mj21193r.pdf

MJ21193G MJ21193G

Order this documentMOTOROLAby MJ21193/DSEMICONDUCTOR TECHNICAL DATAPNP*MJ21193NPNSilicon Power Transistors*MJ21194The MJ21193 and MJ21194 utilize Perforated Emitter technology and are*Motorola Preferred Devicespecifically designed for high power audio output, disk head positioners and linearapplications.16 AMPERECOMPLEMENTARY Total Harmonic Distortion Charac

 7.2. Size:122K  onsemi
mj21193 mj21194.pdf

MJ21193G MJ21193G

MJ21193 - PNPMJ21194 - NPNSilicon Power TransistorsThe MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emittertechnology and are specifically designed for high power audio output,disk head positioners and linear applications.http://onsemi.comFeatures Total Harmonic Distortion Characterized 16 AMP COMPLEMENTARY High DC Current Gain SILICON POWER Excellent Gain Lin

 7.3. Size:167K  cn sptech
mj21193.pdf

MJ21193G MJ21193G

SPTECH Product SpecificationSilicon PNP Power Transistor MJ21193DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 25-75@I = -8A,V =-5VFE C CECollector-Emitter Saturation Voltage-: V )= -1.4 V(Max)@ I = -8ACE(sat CComplement to the NPN MJ21194APPLICATIONSDesigned for high power audio output, disk head positionersand other linear applications.ABSO

 7.4. Size:201K  inchange semiconductor
mj21193.pdf

MJ21193G MJ21193G

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJ21193 DESCRIPTION Total Harmonic Distortion Characterized High DC Current Gain High Area of Safe Operation APPLICATIONSDesigned for high power audio output, disk head positioners and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Em

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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