MJ802G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJ802G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 90
V
Tensión emisor-base (Veb): 4
V
Corriente del colector DC máxima (Ic): 30
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 2
MHz
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar MJ802G
MJ802G
Datasheet (PDF)
..1. Size:70K onsemi
mj802g.pdf 
MJ802High-Power NPN SiliconTransistorThis transistor is for use as an output device in complementary audioamplifiers to 100-Watts music power per channel.Features http://onsemi.com High DC Current Gain - hFE = 25-100 @ IC = 7.5 A30 AMPERE Excellent Safe Operating AreaPOWER TRANSISTOR Complement to the PNP MJ4502NPN SILICON Pb-Free Package is Available*100 V
9.1. Size:136K motorola
mj802rev.pdf
Order this documentMOTOROLAby MJ802/DSEMICONDUCTOR TECHNICAL DATAMJ802High-Power NPN Silicon30 AMPERETransistorPOWER TRANSISTORNPN SILICON. . . for use as an output device in complementary audio amplifiers to 100Watts100 VOLTSmusic power per channel.200 WATTS High DC Current Gain hFE = 25100 @ IC = 7.5 A Excellent Safe Operating Area Complement
9.2. Size:41K st
mj802.pdf
MJ802SILICON NPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPEDESCRIPTION The MJ802 is a silicon Epitaxial-Base powertransistor mounted in Jedec TO-3 metal case. Itis intended for general purpose power amplifierand switching applications.12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCEO Collector-emitter Voltage (I
9.3. Size:70K onsemi
mj802.pdf
MJ802High-Power NPN SiliconTransistorThis transistor is for use as an output device in complementary audioamplifiers to 100-Watts music power per channel.Features http://onsemi.com High DC Current Gain - hFE = 25-100 @ IC = 7.5 A30 AMPERE Excellent Safe Operating AreaPOWER TRANSISTOR Complement to the PNP MJ4502NPN SILICON Pb-Free Package is Available*100 V
9.4. Size:70K onsemi
mj802-d.pdf
MJ802High-Power NPN SiliconTransistorThis transistor is for use as an output device in complementary audioamplifiers to 100-Watts music power per channel.Features http://onsemi.com High DC Current Gain - hFE = 25-100 @ IC = 7.5 A30 AMPERE Excellent Safe Operating AreaPOWER TRANSISTOR Complement to the PNP MJ4502NPN SILICON Pb-Free Package is Available*100 V
9.6. Size:145K inchange semiconductor
mj802.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ802 DESCRIPTION High DC Current Gain- : hFE= 25-100@IC= 7.5A Excellent Safe Operating Area Complement to Type MJ4502 APPLICATIONSDesigned for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PA
Otros transistores... 2SA1801
, 2SA1802
, 2SA1802A
, 2SA1803
, 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, TIP35C
, 2SA1805
, 2SA1805O
, 2SA1805R
, 2SA1806
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
.
