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MJ802G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJ802G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 200 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 90 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 30 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 2 MHz
   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: TO3
 

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MJ802G Datasheet (PDF)

 ..1. Size:70K  onsemi
mj802g.pdf pdf_icon

MJ802G

MJ802High-Power NPN SiliconTransistorThis transistor is for use as an output device in complementary audioamplifiers to 100-Watts music power per channel.Features http://onsemi.com High DC Current Gain - hFE = 25-100 @ IC = 7.5 A30 AMPERE Excellent Safe Operating AreaPOWER TRANSISTOR Complement to the PNP MJ4502NPN SILICON Pb-Free Package is Available*100 V

 9.1. Size:136K  motorola
mj802rev.pdf pdf_icon

MJ802G

Order this documentMOTOROLAby MJ802/DSEMICONDUCTOR TECHNICAL DATAMJ802High-Power NPN Silicon30 AMPERETransistorPOWER TRANSISTORNPN SILICON. . . for use as an output device in complementary audio amplifiers to 100Watts100 VOLTSmusic power per channel.200 WATTS High DC Current Gain hFE = 25100 @ IC = 7.5 A Excellent Safe Operating Area Complement

 9.2. Size:41K  st
mj802.pdf pdf_icon

MJ802G

MJ802SILICON NPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPEDESCRIPTION The MJ802 is a silicon Epitaxial-Base powertransistor mounted in Jedec TO-3 metal case. Itis intended for general purpose power amplifierand switching applications.12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCEO Collector-emitter Voltage (I

 9.3. Size:70K  onsemi
mj802.pdf pdf_icon

MJ802G

MJ802High-Power NPN SiliconTransistorThis transistor is for use as an output device in complementary audioamplifiers to 100-Watts music power per channel.Features http://onsemi.com High DC Current Gain - hFE = 25-100 @ IC = 7.5 A30 AMPERE Excellent Safe Operating AreaPOWER TRANSISTOR Complement to the PNP MJ4502NPN SILICON Pb-Free Package is Available*100 V

Otros transistores... MJ16018-1400V , MJ21193G , MJ21194G , MJ21195G , MJ21196G , MJ2955G , MJ3055 , MJ4502G , TIP3055 , MJ8100R , MJB41CG , MJB41CT4G , MJB42CT4G , MJB44H11G , MJB44H11T4 , MJB44H11T4-A , MJB44H11T4G .

 

 
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